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RN4609 Silicon NPN/PNP Epitaxial Type Transistor Datasheet


RN4609

Toshiba
RN4609
Part Number RN4609
Manufacturer Toshiba (https://www.toshiba.com/)
Title Digital Transistors SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
Description TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4609 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4609 Unit: mm  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify ...
Features & Storage Corporation Start of commercial production 1988-11 2019-11-01 RN4609 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector power dissipation Junction temperature Storage temperature range PC * Tj Tstg 300 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) ar...

Document Datasheet RN4609 datasheet pdf (706.24KB)
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Price
1 units: 0.43 USD
10 units: 0.303 USD
100 units: 0.132 USD
1000 units: 0.086 USD
3000 units: 0.07 USD
9000 units: 0.058 USD
24000 units: 0.056 USD
45000 units: 0.048 USD
99000 units: 0.046 USD
BuyNow (No Longer Stocked Toshiba America Electronic Components RN4609(TE85L,F))



Toshiba
RN4608
Part Number RN4608
Manufacturer Toshiba
Title Silicon NPN/PNP Epitaxial Type Transistor
Description TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4608 Switching, Inverter Circuit, Inter.
Features ices & Storage Corporation Start of commercial production 1988-11 2019-11-01 RN4608 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector power dissipation Junction temperature Storage temperature range PC * Tj Tstg 300 mW 150 °C −55 to 150 °C .

Document RN4608 datasheet pdf


Toshiba
RN4607
Part Number RN4607
Manufacturer Toshiba
Title Silicon NPN/PNP Epitaxial Type Transistor
Description TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4607 Switching, Inverter Circuit, Inter.
Features e Corporation Start of commercial production 1988-11 2019-11-01 RN4607 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector power dissipation Junction temperature Storage temperature range PC * Tj Tstg 300 mW 150 °C −55 to 150 °C Note: Using .

Document RN4607 datasheet pdf


Toshiba
RN4606
Part Number RN4606
Manufacturer Toshiba
Title Silicon NPN/PNP Epitaxial Type Transistor
Description RN4606 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4606 Switching, Inverter Circui.
Features c Devices & Storage Corporation Start of commercial production 1988-11 2019-11-01 RN4606 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector power dissipation Junction temperature Storage temperature range PC * Tj Tstg 300 mW 150 °C −55 to 150.

Document RN4606 datasheet pdf


Toshiba
RN4605
Part Number RN4605
Manufacturer Toshiba
Title Silicon NPN/PNP Epitaxial Type Transistor
Description TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4605 Switching, Inverter Circuit, Interfac.
Features ces & Storage Corporation Start of commercial production 1988-11 2019-11-01 RN4605 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector power dissipation Junction temperature Storage temperature range PC * Tj Tstg 300 mW 150 °C −55 to 150 °C .

Document RN4605 datasheet pdf



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