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RN2714 Silicon PNP Epitaxial Type Transistor Datasheet


RN2714

Toshiba
RN2714
Part Number RN2714
Manufacturer Toshiba (https://www.toshiba.com/)
Title
Description RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2714 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm  Two devices incorporated in a USV (5-pin ultra-super-mini-type)  With built-in bias resistors  Simplify circ...
Features current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 1 © 2019 Toshiba Electronic Devices & Storage Corporation Start...

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Toshiba
RN2713JE
Part Number RN2713JE
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2712JE, RN2713JE Switching,.
Features V −5 V −100 mA 100 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating cond.

Document RN2713JE datasheet pdf


Toshiba
RN2712JE
Part Number RN2712JE
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2712JE, RN2713JE Switching,.
Features V −5 V −100 mA 100 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating cond.

Document RN2712JE datasheet pdf


Toshiba
RN2711JE
Part Number RN2711JE
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, I.
Features ote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.).

Document RN2711JE datasheet pdf


Toshiba
RN2711
Part Number RN2711
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2710, RN2711 Unit: mm Switchi.
Features y loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum r.

Document RN2711 datasheet pdf



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