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RN2711JE Silicon PNP Epitaxial Type Transistor Datasheet


RN2711JE

Toshiba
RN2711JE
Part Number RN2711JE
Manufacturer Toshiba (https://www.toshiba.com/)
Title Digital Transistors ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
Description RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. •...
Features ote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). No...

Document Datasheet RN2711JE datasheet pdf (284.04KB)
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Price
1 units: 0.44 USD
10 units: 0.307 USD
100 units: 0.13 USD
1000 units: 0.074 USD
4000 units: 0.072 USD
8000 units: 0.058 USD
24000 units: 0.056 USD
48000 units: 0.053 USD
100000 units: 0.047 USD
BuyNow (No Longer Stocked Toshiba America Electronic Components RN2711JE(TE85L,F))



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