RN2711JE Silicon PNP Epitaxial Type Transistor Datasheet


Part Number RN2711JE
Manufacturer Toshiba (https://www.toshiba.com/)
Title Digital Transistors ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
Description RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. •...
Features ote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). No...

Document Datasheet RN2711JE datasheet pdf (284.04KB)
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