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RN2709JE Silicon PNP Epitaxial Type Transistor Datasheet


RN2709JE

Toshiba
RN2709JE
Part Number RN2709JE
Manufacturer Toshiba (https://www.toshiba.com/)
Title Digital Transistors ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
Description RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2707JE, RN2708JE, RN2709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin) ...
Features 9JE −15 Collector current IC −100 mA Collector power dissipation RN2707JE PC (Note 1) 100 mW Junction temperature to 2709JE Tj 150 °C Storage temperature range Tstg −55 to 150 °C 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) JEDEC ― JEITA ― TOSHIBA 2-2P1D Weight: 3 mg (typ.) Equivalent Circuit (top view) 5 4 Q1 Q2 123 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signific...

Document Datasheet RN2709JE datasheet pdf (335.17KB)
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Price
1 units: 0.45 USD
10 units: 0.374 USD
100 units: 0.192 USD
1000 units: 0.12 USD
4000 units: 0.073 USD
8000 units: 0.058 USD
24000 units: 0.054 USD
100000 units: 0.046 USD
BuyNow (No Longer Stocked Toshiba America Electronic Components RN2709JE(TE85L,F))



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