RN2709JE Silicon PNP Epitaxial Type Transistor Datasheet


Part Number RN2709JE
Manufacturer Toshiba (https://www.toshiba.com/)
Title Digital Transistors ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
Description RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2707JE, RN2708JE, RN2709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin) ...
Features 9JE −15 Collector current IC −100 mA Collector power dissipation RN2707JE PC (Note 1) 100 mW Junction temperature to 2709JE Tj 150 °C Storage temperature range Tstg −55 to 150 °C 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) JEDEC ― JEITA ― TOSHIBA 2-2P1D Weight: 3 mg (typ.) Equivalent Circuit (top view) 5 4 Q1 Q2 123 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signific...

Document Datasheet RN2709JE datasheet pdf (335.17KB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 0 In Stock
1 units: 0.45 USD
10 units: 0.374 USD
100 units: 0.192 USD
1000 units: 0.12 USD
4000 units: 0.073 USD
8000 units: 0.058 USD
24000 units: 0.054 USD
100000 units: 0.046 USD
BuyNow (No Longer Stocked Toshiba America Electronic Components RN2709JE(TE85L,F))

logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy