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RN2703 Silicon PNP Epitaxial Type Transistor Datasheet


RN2703

Toshiba
RN2703
Part Number RN2703
Manufacturer Toshiba (https://www.toshiba.com/)
Title Digital Transistors PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A
Description RN2701 to RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2701, RN2702, RN2703 RN2704, RN2705, RN2706 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in USV (ultra super mini type with ...
Features mmon) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2701 to 2706 RN2701 to 2704 RN2705, 2706 RN2701 to 2706 VCBO VCEO VEBO IC PC * Tj Tstg −50 V −50 V −10 V −5 −100 mA 200 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the...

Document Datasheet RN2703 datasheet pdf (593.15KB)
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Stock 8699 In Stock
Price
1 units: 0.28 USD
10 units: 0.194 USD
100 units: 0.08 USD
1000 units: 0.055 USD
3000 units: 0.044 USD
9000 units: 0.036 USD
24000 units: 0.035 USD
45000 units: 0.032 USD
99000 units: 0.028 USD
BuyNow BuyNow Buy Now (Manufacturer a Toshiba America Electronic Components RN2703,LF)



Toshiba
RN2709JE
Part Number RN2709JE
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2707JE, RN2708JE, RN2709JE Sw.
Features 9JE −15 Collector current IC −100 mA Collector power dissipation RN2707JE PC (Note 1) 100 mW Junction temperature to 2709JE Tj 150 °C Storage temperature range Tstg −55 to 150 °C 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) JEDEC ― JEITA ― .

Document RN2709JE datasheet pdf


Toshiba
RN2709
Part Number RN2709
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2707 to RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2707, RN2708, RN2709 Switchin.
Features e Collector current Collector power dissipation Junction temperature Storage temperature range RN2707 to 2709 RN2707 RN2708 RN2709 RN2707 to 2709 VCBO VCEO VEBO IC PC* Tj Tstg −50 V −50 V −6 −7 V −15 −100 mA 200 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.

Document RN2709 datasheet pdf


Toshiba
RN2708JE
Part Number RN2708JE
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2707JE, RN2708JE, RN2709JE Sw.
Features 9JE −15 Collector current IC −100 mA Collector power dissipation RN2707JE PC (Note 1) 100 mW Junction temperature to 2709JE Tj 150 °C Storage temperature range Tstg −55 to 150 °C 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) JEDEC ― JEITA ― .

Document RN2708JE datasheet pdf


Toshiba
RN2708
Part Number RN2708
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2707 to RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2707, RN2708, RN2709 Switchin.
Features e Collector current Collector power dissipation Junction temperature Storage temperature range RN2707 to 2709 RN2707 RN2708 RN2709 RN2707 to 2709 VCBO VCEO VEBO IC PC* Tj Tstg −50 V −50 V −6 −7 V −15 −100 mA 200 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.

Document RN2708 datasheet pdf


Toshiba
RN2707JE
Part Number RN2707JE
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2707JE, RN2708JE, RN2709JE Sw.
Features 9JE −15 Collector current IC −100 mA Collector power dissipation RN2707JE PC (Note 1) 100 mW Junction temperature to 2709JE Tj 150 °C Storage temperature range Tstg −55 to 150 °C 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) JEDEC ― JEITA ― .

Document RN2707JE datasheet pdf



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