RN2702JE Silicon PNP Epitaxial Type Transistor Datasheet


Part Number RN2702JE
Manufacturer Toshiba (https://www.toshiba.com/)
Title Digital Transistors Gen Trans PNP x 2 ESV, -50V, -100A
Description RN2701JE to RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated in...
Features tor-base voltage RN2701JE VCBO −50 V Collector-emitter voltage to 2706JE VCEO −50 V RN2701JE to 2704JE −10 Emitter-base voltage VEBO V RN2705JE RN2706JE −5 Collector current IC −100 mA Collector power dissipation RN2701JE PC (Note 1) 100 mW Junction temperature to 2706JE Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating con...

Document Datasheet RN2702JE datasheet pdf (0.97MB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 0 In Stock
1 units: 0.46 USD
10 units: 0.34 USD
100 units: 0.193 USD
1000 units: 0.098 USD
4000 units: 0.084 USD
8000 units: 0.067 USD
24000 units: 0.063 USD
48000 units: 0.056 USD
100000 units: 0.054 USD
BuyNow (No Longer Stocked Toshiba America Electronic Components RN2702JE(TE85L,F))

logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy