| Description | Ordering number : ENA1486 RD2004JN SANYO Semiconductors DATA SHEET RD2004JN Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recov... |
| Features |
• • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward C... |
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Sanyo |
Ultrahigh-Speed Switching Diode |
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Sanyo |
Ultrahigh-Speed Switching Diode |
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Sanyo |
Ultrahigh-Speed Switching Diode |
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Sanyo |
Ultrahigh-Speed Switching Diode |
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CARLO GAVAZZI |
Solid State Relays |
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Sanyo |
High-Speed Switching Diode |
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Sanyo |
Ultrahigh-Speed Switching Diode |
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Sanyo |
Ultrahigh-Speed Switching Diode |
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ON Semiconductor |
Planar Ultrafast Rectifier |
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Sanyo |
Ultrahigh-Speed Switching Diode |
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Desde 2024. D4U Semiconductor.
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