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RA80H1415M1 Silicon RF Power Modules Datasheet


RA80H1415M1

Mitsubishi Electric Semiconductor
RA80H1415M1

Part Number RA80H1415M1
Manufacturer Mitsubishi Electric Semiconductor
Description The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. Wit...
Features
• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
• Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz, VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 136-174MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm BLOCK DIAGRAM 2 3 14 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (FIN) PACKAGE CODE: H2M RoHS COMPLIANCE
• RA80H1415M1-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G201” after the Lot Marking.
• This pr...

Document Datasheet RA80H1415M1 datasheet pdf (303.70KB)



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