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PDD3906 N-Channel MOSFETs Datasheet


PDD3906

Potens semiconductor
PDD3906

Part Number PDD3906
Manufacturer Potens semiconductor
Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai...
Features
 30V,80A, RDS(ON) =6mΩ@VGS = 10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available Applications
 MB / VGA / Vcore
 POL Applications
 SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter...

Document Datasheet PDD3906 datasheet pdf (574.83KB)



PDD3908

Potens semiconductor
PDD3908
Part Number PDD3908
Manufacturer Potens semiconductor
Title N-Channel MOSFETs
Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai.
Features
 30V,55A, RDS(ON) =9mΩ@VGS = 10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available Applications
 MB / VGA / Vcore
 POL Applications
 SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter.

Document PDD3908 datasheet pdf


PDD3907

Potens semiconductor
PDD3907
Part Number PDD3907
Manufacturer Potens semiconductor
Title P-Channel MOSFETs
Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai.
Features
 -30V,-35A, RDS(ON) =20mΩ@VGS = -10V
 Fast switching
 Green Device Available
 Suit for -4.5V Gate Drive Applications Applications
 MB / VGA / Vcore
 POL Applications
 Load Switch
 LED Application Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Param.

Document PDD3907 datasheet pdf



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