Description | P6SMB Series Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 600 W Features ● Glass passivated chip ● 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle):0.01 % ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast response t... |
Features |
● Glass passivated chip ● 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle):0.01 % ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast response time ● RoHS compliant Mechanical Data ● Case: Molded plastic ● Epoxy: UL 94V-0 rate flame retardant ● Lead: Solderable per MIL-STD-750, method 2026 ● Polarity: Color band denotes c... |
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![]() E-DA SEMICONDUCTOR |
TRANSIENT VOLTAGE SUPPRESSOR |
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![]() Pan Jit International |
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![]() MIC |
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![]() SOCAY |
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![]() KD |
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![]() SEMIWILL |
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![]() ON Semiconductor |
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![]() Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor |
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![]() JGD |
Surface Mount Transient Voltage Suppressors Diodes |
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Desde 2024. D4U Semiconductor.
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