| Description | This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufact... |
| Features |
n Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction Temperature
o o
Value 60 60 ± 20 12 8.4 48 60 0.4 6 -65 to 175 175
Unit V V V A A A W W /o C V/ns
o o
C C
( •) Pulse width limited by safe operating area ( 1) ISD ≤ 12 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Note: For the P-CHANNEL MOSFET act... |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
TT |
Rotary Potentiometer |
|
|
|
|
Diotec |
Silicon Rectifier Diodes |
|
|
|
|
Semikron |
Standard silicon rectifier diodes |
|
|
|
|
Diotec |
Silicon Rectifier Diodes |
|
|
|
|
Semikron |
Standard silicon rectifier diodes |
|
|
|
|
Diotec |
Silicon Rectifier Diodes |
|
|
|
|
Semikron |
Standard silicon rectifier diodes |
|
|
|
|
Diotec |
Silicon Rectifier Diodes |
|
|
|
|
Semikron |
Standard silicon rectifier diodes |
|
|
|
|
Semikron |
Standard silicon rectifier diodes |
|
Desde 2024. D4U Semiconductor.
|
Contáctenos
|
Política de Privacidad
