Description | This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufact... |
Features |
n Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction Temperature
o o
Value 60 60 ± 20 12 8.4 48 60 0.4 6 -65 to 175 175
Unit V V V A A A W W /o C V/ns
o o
C C
( •) Pulse width limited by safe operating area ( 1) ISD ≤ 12 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Note: For the P-CHANNEL MOSFET act... |
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Rotary Potentiometer |
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Silicon Rectifier Diodes |
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Standard silicon rectifier diodes |
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Silicon Rectifier Diodes |
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![]() Semikron |
Standard silicon rectifier diodes |
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![]() Diotec |
Silicon Rectifier Diodes |
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![]() Semikron |
Standard silicon rectifier diodes |
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![]() Diotec |
Silicon Rectifier Diodes |
![]() |
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![]() Semikron |
Standard silicon rectifier diodes |
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![]() Semikron |
Standard silicon rectifier diodes |
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Desde 2024. D4U Semiconductor.
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