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NCE60R360K N-Channel Super Junction Power MOSFET Datasheet


NCE60R360K

NCE Power Semiconductor
NCE60R360K

Part Number NCE60R360K
Manufacturer NCE Power Semiconductor
Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high volt...
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant TVDS@ jmax RDS(ON)MAX ID 650 360 11 V mΩ A Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS) Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE60R360K TO-252 NCE60R360K Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V) VDS Gate-Source Volt...

Document Datasheet NCE60R360K datasheet pdf (505.57KB)



NCE Power Semiconductor
NCE60R360F
Part Number NCE60R360F
Manufacturer NCE Power Semiconductor
Title N-Channel Super Junction Power MOSFET
Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOS.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant TVDS@ jmax RDS(ON)MAX ID 650 360 11 V mΩ A Application
● Power factor correction(PFC)
● Switched mode.

Document NCE60R360F datasheet pdf


NCE Power Semiconductor
NCE60R360D
Part Number NCE60R360D
Manufacturer NCE Power Semiconductor
Title N-Channel Super Junction Power MOSFET
Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOS.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant TVDS@ jmax RDS(ON)MAX ID 650 360 11 V mΩ A Application
● Power factor correction(PFC)
● Switched mode.

Document NCE60R360D datasheet pdf


NCE Power Semiconductor
NCE60R360
Part Number NCE60R360
Manufacturer NCE Power Semiconductor
Title N-Channel Super Junction Power MOSFET
Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOS.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant TVDS@ jmax RDS(ON)MAX ID 650 360 11 V mΩ A Application
● Power factor correction(PFC)
● Switched mode.

Document NCE60R360 datasheet pdf



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