Description | ® MOS-TECH Semiconductor Co.,LTD 07 N-Channel Power MOSFET 4V, A, mΩ Features • RDS(on) = 3mΩ (Typ.)@ VGS = 10V, ID = 80A • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • RoHS Compliant January 2010 Applic... |
Features |
• RDS(on) = 3mΩ (Typ.)@ VGS = 10V, ID = 80A • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • RoHS Compliant January 2010 Application • Automotive Engine Control • Powertrain Management • Motors, Solenoids • Electronic Steering • Integrated Starter/ Alternator • Distributed Power Architectures and VRMs • Primary Swi... |
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