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MDP08N055TH Single N-channel Trench MOSFET Datasheet


MDP08N055TH

MagnaChip
MDP08N055TH

Part Number MDP08N055TH
Manufacturer MagnaChip
Description The MDP08N055TH, Magnachip’s latest generation of MV MOSFET Technology, which provides high performance in the lowest Rds(on), fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike, Light electric vehicles,...
Features  VDS = 80V  ID = 120 A @VGS = 10V  Very low on-resistance RDS(ON) < 5.5 mΩ @VGS = 10V  175 oC operating temperature  100% UIL Tested  100% Rg Tested  100% △VDS Tested D G DS TO-220 Absolute Maximum Ratings (TJ = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC TC=25oC TC=100oC TA=25oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Re...

Document Datasheet MDP08N055TH datasheet pdf (1.09MB)



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