Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK11A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement ... |
Features | (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK11A65D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise ... |
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![]() Toshiba Semiconductor |
TK11A60D |
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2SK1101 |
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![]() ETC |
2SK1102-01MR |
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![]() TOKO Inc |
TEMPERATURE SENSOR IC |
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![]() TOKO Inc |
TEMPERATURE SENSOR IC |
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![]() TOKO Inc |
TEMPERATURE SENSOR IC |
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Desde 2024. D4U Semiconductor.
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