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IXTA180N10T7 Power MOSFET Datasheet


IXTA180N10T7

IXYS Corporation
IXTA180N10T7
Part Number IXTA180N10T7
Manufacturer IXYS Corporation
Title MOSFETs 180 Amps 100V 6.1 Rds
Description PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100...
Features Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C Low package inductance °C °C - easy to drive and to protect 175 ° C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS...

Document Datasheet IXTA180N10T7 datasheet pdf (188.40KB)
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1 units: 5.98 USD
10 units: 5.02 USD
50 units: 3.83 USD
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IXTA180N10T

INCHANGE
IXTA180N10T
Part Number IXTA180N10T
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and .
Features
·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Speed Power Switching Applications
·ABSOLUT.

Document IXTA180N10T datasheet pdf


IXTA180N10T

IXYS Corporation
IXTA180N10T
Part Number IXTA180N10T
Manufacturer IXYS Corporation
Title Power MOSFET
Description TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA).
Features z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - 42V Power Bus - ABS Systems z DC/DC .

Document IXTA180N10T datasheet pdf



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