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IXFH320N10T2 Power MOSFET Datasheet


IXFH320N10T2

IXYS Corporation
IXFH320N10T2
IXFH320N10T2
Part Number IXFH320N10T2
Manufacturer IXYS Corporation
Title MOSFET, N-CH, 100V, 320A, TO-247
Description TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(...
Features z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Synchronous Recification z DC-DC Converters z Battery Chargers z Switch-...

Document Datasheet IXFH320N10T2 datasheet pdf (187.09KB)
Distributor Distributor
element14 Asia-Pacific
Stock 20 In stock
Price
10 units: 16785 KRW
5 units: 18509 KRW
1 units: 20452 KRW
BuyNow BuyNow BuyNow (Manufacturer a IXYS Corporation IXFH320N10T2)



IXFH320N10T2

INCHANGE
IXFH320N10T2
Part Number IXFH320N10T2
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel MOSFET Transistor IXFH320N10T2 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.
Features
·Drain Source Voltage- : VDSS= 100V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switch-Mode and Resonant-Mode Power Supplies
·DC-DC Converters.

Document IXFH320N10T2 datasheet pdf





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