HN4C06J Silicon NPN Epitaxial Type Transistor Datasheet


Part Number HN4C06J
Manufacturer Toshiba (https://www.toshiba.com/)
Title Bipolar Transistors - BJT BJT Trans LFreq 120V NPN NPN 0.1A
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C06J HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) z Low noise : NF = 1dB(typ.) Un...
Features n the Weight: 0.014g(Typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *Total rating. Power dissipation per element should not exceed 200mW. Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Symbol Test Circ...

Document Datasheet HN4C06J datasheet pdf (338.37KB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 4800 In Stock
1 units: 0.4 USD
10 units: 0.309 USD
100 units: 0.186 USD
1000 units: 0.117 USD
3000 units: 0.107 USD
9000 units: 0.084 USD
BuyNow BuyNow Buy Now (Manufacturer a Toshiba America Electronic Components HN4C06J-BL(TE85L,F)

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