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GPT18N50D POWER FIELD EFFECT TRANSISTOR Datasheet


GPT18N50D

Greatpower
GPT18N50D

Part Number GPT18N50D
Manufacturer Greatpower
Description FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking cap...
Features This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE...

Document Datasheet GPT18N50D datasheet pdf (1.46MB)



GPT18N50CD

Greatpower
GPT18N50CD
Part Number GPT18N50CD
Manufacturer Greatpower
Title POWER FIELD EFFECT TRANSISTOR
Description FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking cap.
Features This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE.

Document GPT18N50CD datasheet pdf


GPT18N50C

Greatpower
GPT18N50C
Part Number GPT18N50C
Manufacturer Greatpower
Title POWER FIELD EFFECT TRANSISTOR
Description FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking cap.
Features This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE.

Document GPT18N50C datasheet pdf


GPT18N50

Greatpower
GPT18N50
Part Number GPT18N50
Manufacturer Greatpower
Title POWER FIELD EFFECT TRANSISTOR
Description FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking cap.
Features This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE.

Document GPT18N50 datasheet pdf



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