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GANB4R8-040CBA Gallium Nitride (GaN) FET Datasheet


GANB4R8-040CBA

nexperia
GANB4R8-040CBA
Part Number GANB4R8-040CBA
Manufacturer nexperia (https://www.nexperia.com/)
Title GaN FETs GANB4R8-040CBA/SOT8086/WLCSP22
Description The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLC...
Features and benefits
• Enhancement mode - normally-off power switch
• Bi-directional device
• Ultra high switching speed capability
• Ultra-low on-state resistance
• RoHS, Pb-free, REACH-compliant
• High efficiency and high power density
• Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm 3. Applicati...

Document Datasheet GANB4R8-040CBA datasheet pdf (1.22MB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 0 In Stock
Price
1 units: 2.08 USD
10 units: 1.73 USD
100 units: 1.37 USD
250 units: 1.27 USD
500 units: 1.15 USD
1000 units: 0.989 USD
2500 units: 0.94 USD
5000 units: 0.904 USD
BuyNow (No Longer Stocked Nexperia GANB4R8-040CBAZ)



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