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EMP29N04E N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMP29N04E

Excelliance MOS
EMP29N04E

Part Number EMP29N04E
Manufacturer Excelliance MOS
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V RDSON (MAX.) 2.9mΩ ID 172A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL E...
Features T °C / W 2019/9/6 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMP29N04E LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VDS = 5V, ID =...

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Excelliance MOS
EMP29N04AS
Part Number EMP29N04AS
Manufacturer Excelliance MOS
Title Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N-CH BVDSS 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.6mΩ 4.8mΩ ID @TC=25℃ 83.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg.
Features o-Ambient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1% 375°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test 2020/7/20 A.1 EMP29N04AS LIMITS ±20 83 52 16 13 196 56 156.8 78.4 41.7 16.7 1.7 1.1 -55 to 150 UNIT V A mJ W W °C MAXI.

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