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EMP21N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMP21N03HR

Excelliance MOS
EMP21N03HR

Part Number EMP21N03HR
Manufacturer Excelliance MOS
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 2.3mΩ ID 100A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL G...
Features n a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 2.5 50 UNIT °C / W 2019/8/13 p.1 EMP21N03HR ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS ...

Document Datasheet EMP21N03HR datasheet pdf (944.31KB)



Excelliance MOS
EMP21N03HC
Part Number EMP21N03HC
Manufacturer Excelliance MOS
Title MOSFET
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.1mΩ ID 100A G UIS, Rg 100% Te.
Features hen mounted on a 1 in2 pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2016/3/9 p.1 EMP21N03HC ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body .

Document EMP21N03HC datasheet pdf



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