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EMF04P02V P-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMF04P02V

Excelliance MOS
EMF04P02V

Part Number EMF04P02V
Manufacturer Excelliance MOS
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -20V RDSON (MAX.) 6.3mΩ ID -46A P-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL ...
Features h limited by maximum junction temperature. 2Duty cycle  1% 2019/6/25 EMF04P02V UNIT V A mJ W W °C UNIT °C / W p.1 350°C / W when mounted on a 1 in2 pad of 2 oz copper. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMF04P02V LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250A VDS = VGS, ID = -250A...

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Excelliance MOS
EMF04P02H
Part Number EMF04P02H
Manufacturer Excelliance MOS
Title P-Channel Logic Level Enhancement Mode Field Effect Transistor
Description EMF04P02H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 5.5mΩ ID ‐72A G UIS.
Features A mJ W °C UNIT °C / W 2016/10/3 p.1 EMF04P02H ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State D.

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