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EMDA2N20A N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMDA2N20A

Excelliance MOS
EMDA2N20A

Part Number EMDA2N20A
Manufacturer Excelliance MOS
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 200V D RDSON (MAX.) 120mΩ ID 18A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Vo...
Features AMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 160V, VGS = 0V VDS = 130V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V VGS = 10V, ID = 10.5A VGS = 7V, ID = 10.5A VDS = 5V, ID = 10.5A DYNAMIC 200 V 2.0 3.2 4.5 ±100 nA 1 A 25 18 A 105 120 mΩ 115 140 12 S Input Cap...

Document Datasheet EMDA2N20A datasheet pdf (247.30KB)



Excelliance MOS
EMDA2N20F
Part Number EMDA2N20F
Manufacturer Excelliance MOS
Title MOSFET
Description     N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  200V  D RDSON (MAX.)  120mΩ  ID  18A  G   UIS.
Features .

Document EMDA2N20F datasheet pdf



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