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EMD60N15G N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMD60N15G

Excelliance MOS
EMD60N15G

Part Number EMD60N15G
Manufacturer Excelliance MOS
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 60mΩ ID 6A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source V...
Features RISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 6A VGS = 7V, ID = 5A VDS = 5V, ID = 6A DYNAMIC 150 V 2.0 3.0 4.5 ±100 nA 1 A 25 6 ...

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Excelliance MOS
EMD60N15F
Part Number EMD60N15F
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description BVDSS 150V RDSON (MAX.) 60mΩ ID 20A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATI.
Features 2/12/19 TYPICAL MAXIMUM 3.5 62.5 UNIT °C / W p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMD60N15F LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Cur.

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Excelliance MOS
EMD60N15E
Part Number EMD60N15E
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 60mΩ ID 43A G UIS, Rg 100% Tes.
Features J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS.

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Excelliance MOS
EMD60N15A
Part Number EMD60N15A
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V RDSON (MAX.) 60mΩ ID 23A N Channel MOSFET UIS,.
Features ss Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMD60N15A LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS.

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