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EMBB5N10Q N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMBB5N10Q

Excelliance MOS
EMBB5N10Q

Part Number EMBB5N10Q
Manufacturer Excelliance MOS
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 250mΩ ID 3A G UIS 100% Tested ...
Features RACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transcon...

Document Datasheet EMBB5N10Q datasheet pdf (184.90KB)



EMBB5N10P

Excelliance MOS
EMBB5N10P
Part Number EMBB5N10P
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 280mΩ ID 2.4A G UIS 100% Teste.
Features CAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward T.

Document EMBB5N10P datasheet pdf



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