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EMBA5N10AS N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMBA5N10AS

Excelliance MOS
EMBA5N10AS

Part Number EMBA5N10AS
Manufacturer Excelliance MOS
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 135mΩ RDSON (MAX.)@VGS...
Features 75 UNIT °C / W 2019/10/2 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMBA5N10AS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain ...

Document Datasheet EMBA5N10AS datasheet pdf (423.47KB)



EMBA5N10A

Excelliance MOS
EMBA5N10A
Part Number EMBA5N10A
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description     N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS.
Features  / W  p.1      ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)  PARAMETER  SYMBOL TEST CONDITIONS  EMBA5N10A LIMITS  UNIT MIN  TYP MAX STATIC  Drain‐Source Breakdown Voltage  Gate Threshold Voltage  Gate‐Body Leakage  Zero Gate Voltage Drain Current  On‐State Drain Curren.

Document EMBA5N10A datasheet pdf



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