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EMB55N03JS N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB55N03JS

Excelliance MOS
EMB55N03JS

Part Number EMB55N03JS
Manufacturer Excelliance MOS
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 55mΩ ID 3.5A G S Pb‐Free Lead P...
Features kdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = ...

Document Datasheet EMB55N03JS datasheet pdf (228.86KB)



EMB55N03J

Excelliance MOS
EMB55N03J
Part Number EMB55N03J
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 55mΩ ID 3.5A G S Pb-Free Lead P.
Features ARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON).

Document EMB55N03J datasheet pdf



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