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EMB32C03V N & P-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB32C03V

Excelliance MOS
EMB32C03V

Part Number EMB32C03V
Manufacturer Excelliance MOS
Description N & P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH P-CH BVDSS 30V -30V RDSON (MAX.) @VGS=10V 32mΩ 55mΩ RDSON (MAX.) @VGS=4.5V 45mΩ 85mΩ ID@TA=25°C 6A -5A N+P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RA...
Features C / W when mounted on a 1 in2 pad of 2 oz copper. 2019/7/31 TYPICAL MAXIMUM 7.5 55 UNIT °C / W p.1 EMB32C03V ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VGS = 0V, ID = -250A VDS = VGS, ID = 250A VDS = VGS, ID = -250A N-CH 30 P-CH -30 V N-CH...

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Excelliance MOS
EMB32C03G
Part Number EMB32C03G
Manufacturer Excelliance MOS
Title MOSFET
Description N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 32mΩ 40mΩ ID 6.
Features S LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A N‐CH.

Document EMB32C03G datasheet pdf



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