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EMB25N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB25N10A

Excelliance MOS
EMB25N10A

Part Number EMB25N10A
Manufacturer Excelliance MOS
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 30mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source ...
Features RAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 80V, VGS = 0V VDS = 70V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 30A VGS = 5V, ID = 20A VDS = 5V, ID = 30A DYNAMIC 100 V 1.0 1.7 3.0 ±100 nA 1 A 25 50 A 26 30 mΩ 28 35 38 S Input Capacitance O...

Document Datasheet EMB25N10A datasheet pdf (212.73KB)



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