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EMB22C04H N & P-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB22C04H

Excelliance MOS
EMB22C04H

Part Number EMB22C04H
Manufacturer Excelliance MOS
Description N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 40V ‐40V RDSON (MAX.) 22mΩ 50mΩ ID 3...
Features UNIT °C / W p.1 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. EMB22C04H ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐S...

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EMB22C04G

Excelliance MOS
EMB22C04G
Part Number EMB22C04G
Manufacturer Excelliance MOS
Title MOSFET
Description N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 40V ‐40V RDSON (MAX.) 22mΩ 42mΩ ID 7.
Features ITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A N‐CH 40 V.

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EMB22C04A

Excelliance MOS
EMB22C04A
Part Number EMB22C04A
Manufacturer Excelliance MOS
Title MOSFET
Description N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) ID N‐CH 40V 22mΩ 7.5A P‐CH ‐40V 42mΩ ‐6.
Features reakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A N‐CH 40 V VGS = 0V, ID = ‐250A P‐CH ‐40 VDS = VGS, .

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