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EMB18A04VB Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB18A04VB

Excelliance MOS
EMB18A04VB

Part Number EMB18A04VB
Manufacturer Excelliance MOS
Description Q1 Q2 BVDSS 40V 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 18mΩ 25mΩ 18mΩ 25mΩ ID @TC=25℃ ID @TA=25℃ 28A 28A 10A 10A Dual N Cha...
Features ▪100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 15A, Rated VDS=40V N-CH_Q1 ▪100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 15A, Rated VDS=40V N-CH_Q2 ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Q1 Q2 Junction-to-Case RθJC Junction-to-...

Document Datasheet EMB18A04VB datasheet pdf (609.96KB)



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