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EMB12P04H Single P-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB12P04H

Excelliance MOS
EMB12P04H

Part Number EMB12P04H
Manufacturer Excelliance MOS
Description ...
Features ...

Document Datasheet EMB12P04H datasheet pdf (459.48KB)



EMB12P04V

Excelliance MOS
EMB12P04V
Part Number EMB12P04V
Manufacturer Excelliance MOS
Title MOSFET
Description P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐22A G UIS, Rg 100% .
Features RICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward.

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EMB12P04F

Excelliance MOS
EMB12P04F
Part Number EMB12P04F
Manufacturer Excelliance MOS
Title Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
Description BVDSS -40V RDSON (MAX.) 12.6mΩ ID -25A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM R.
Features .5 75 UNIT °C / W p.1 EMB12P04F ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 .

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EMB12P04A

Excelliance MOS
EMB12P04A
Part Number EMB12P04A
Manufacturer Excelliance MOS
Title MOSFET
Description P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐25A G UIS, Rg 100% .
Features Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(O.

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