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EMB06N06HS N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB06N06HS

Excelliance MOS
EMB06N06HS

Part Number EMB06N06HS
Manufacturer Excelliance MOS
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 5.2mΩ 7.5mΩ ID@TC=25°C 77A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other...
Features S (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB06N06HS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V VGS = 10V, ID = 15A VGS = 4.5V, ID = 10A VDS = 5V, ID = 15A DYNAMIC 60 V 1.0 2.0 3.0 ±100 nA 1 A ...

Document Datasheet EMB06N06HS datasheet pdf (910.33KB)



Excelliance MOS
EMB06N06H
Part Number EMB06N06H
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description EMB06N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 5.2mΩ ID 80A G UIS, .
Features ckage limited. UNIT V A mJ W °C UNIT °C / W 2016/4/15 p.1 EMB06N06H ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Curr.

Document EMB06N06H datasheet pdf



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