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EMB04N03HS N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB04N03HS

Excelliance MOS
EMB04N03HS

Part Number EMB04N03HS
Manufacturer Excelliance MOS
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Teste...
Features Steady‐State RJA 1Package Limited. 2Pulse width limited by maximum junction temperature. 3Duty cycle  1% 2.5 20 °C / W 50 2018/6/22 p.1 450°C / W when mounted on a 1 in2 pad of 2 oz copper. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIO...

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EMB04N03HR

Excelliance MOS
EMB04N03HR
Part Number EMB04N03HR
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET U.
Features Duty cycle ≤ 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 2.5 °C / W 50 2018/11/11 p.1 EMB04N03HR ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Volt.

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EMB04N03H

Excelliance MOS
EMB04N03H
Part Number EMB04N03H
Manufacturer Excelliance MOS
Title MOSFET
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tes.
Features ad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/2/27 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB04N03H LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltag.

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