| Part Number | EL817A |
| Manufacturer | Everlight |
| Title | 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| Description | The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4... |
| Features |
• Compliance Halogens Free (Only copper leadframe) (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm) • Current transfer ratio (CTR: 50~600% at IF = 5mA, VCE = 5V) • High isolation voltage between input and output (Viso = 5000Vrms) • Creepage distance > 7.62mm • Operating temperature up to +110°C • Com... |
| Document | EL817A datasheet pdf - 940.44KB |
| Part Number | EL817Y-FVG |
| Manufacturer | Everlight |
| Title | 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| Description | The EL817-G series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a. |
| Features |
. • Compliance Halogens Free (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm) • Current transfer ratio (CTR: 50~600% at IF = 5mA, VCE = 5V) • High isolation voltage between input and output (Viso = 5000Vrms ) • Creepage distance > 7.62mm • Operating temperature up to +110°C • Compact small outline pac. |
| Document | EL817Y-FVG datasheet pdf |
| Part Number | EL817Y-FV |
| Manufacturer | Everlight |
| Title | 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| Description | The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4. |
| Features |
• Compliance Halogens Free (Only copper leadframe) (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm) • Current transfer ratio (CTR: 50~600% at IF = 5mA, VCE = 5V) • High isolation voltage between input and output (Viso = 5000Vrms) • Creepage distance > 7.62mm • Operating temperature up to +110°C • Com. |
| Document | EL817Y-FV datasheet pdf |
| Part Number | EL817Y |
| Manufacturer | Everlight |
| Title | 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| Description | The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4. |
| Features |
• Compliance Halogens Free (Only copper leadframe) (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm) • Current transfer ratio (CTR: 50~600% at IF = 5mA, VCE = 5V) • High isolation voltage between input and output (Viso = 5000Vrms) • Creepage distance > 7.62mm • Operating temperature up to +110°C • Com. |
| Document | EL817Y datasheet pdf |
| Part Number | EL817X-FVG |
| Manufacturer | Everlight |
| Title | 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| Description | The EL817-G series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a. |
| Features |
. • Compliance Halogens Free (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm) • Current transfer ratio (CTR: 50~600% at IF = 5mA, VCE = 5V) • High isolation voltage between input and output (Viso = 5000Vrms ) • Creepage distance > 7.62mm • Operating temperature up to +110°C • Compact small outline pac. |
| Document | EL817X-FVG datasheet pdf |
| Part Number | EL817X-FV |
| Manufacturer | Everlight |
| Title | 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| Description | The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4. |
| Features |
• Compliance Halogens Free (Only copper leadframe) (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm) • Current transfer ratio (CTR: 50~600% at IF = 5mA, VCE = 5V) • High isolation voltage between input and output (Viso = 5000Vrms) • Creepage distance > 7.62mm • Operating temperature up to +110°C • Com. |
| Document | EL817X-FV datasheet pdf |
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