Description | The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor modules. The DRV411 provides precision excitation circuitry for the Hall-element effectively eliminating the offset and offset-drift of the Hall element. This device also provides a 250-mA H-bridge for drivi... |
Features |
1
•23 Optimized for Symmetric Hall-Elements (for example, AKM HW-322, HW-302, or similar) • Spinning Current Hall Sensor Excitation – Elimination of Hall Sensor Offset and Drift – Elimination of 1/f Noise • Extended Current Measurement Range – H-Bridge Drive Capability: 250 mA • Precision Difference Amplifier: – Offset and Drift: 100 µV (max), 2 µV/°C (max) – System Bandwidth: 200 kHz • Precision ... |
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Sensor Signal Conditioning IC |
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PWM LOW-SIDE DRIVER |
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1.2A PWM High-Side Driver |
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Desde 2024. D4U Semiconductor.
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