Description | ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Pl... |
Features | ctor Emitter Breakdown Voltage at IC=2mA ST 2SC828 ST 2SC828A Emitter Base Breakdown Voltage at IE=10µA Collector Saturation Voltage at IC=50mA, IB=5mA Base Emitter Voltage at IC=10mA, VCE=5V Gain Bandwidth Product at IC=-2mA, VCE=10V Noise Figure at VCE=5V,IE=0.2mA, RG=2kΩ,f=1kHz Symbol hFE hFE hFE V(BR)CBO V(BR)CBO V(BR)CEO V(BR)CEO V(BR)EBO VCE(sat) VBE fT NF Min. 130 180 260 30 45 25 45... |
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2SC828 |
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NPN Silicon Transistor |
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![]() International Semiconductor |
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![]() International Semiconductor |
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