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C3M0060065J Silicon Carbide Power MOSFET Datasheet


C3M0060065J

Wolfspeed
C3M0060065J
Part Number C3M0060065J
Manufacturer Wolfspeed
Title N채널 650V 36A(Tc) 136W(Tc) 표면 실장 TO-263-7
Description C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) Features • 3rd Generation ...
Features
• 3rd Generation SiC MOSFET technology
• Low inductance package with driver source pin
• 7mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free...

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Distributor Distributor
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All other distributors
Stock 3995 In Stock
Price
50 units: 14082.06 KRW
1 units: 16790 KRW
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C3M0060065L

Wolfspeed
C3M0060065L
Part Number C3M0060065L
Manufacturer Wolfspeed
Title Silicon Carbide Power MOSFET
Description C3M0060065L Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode F eature s • 3rd generation SiC MOSFET technol.
Features rrent, Pulse width tP limited by Tjmax PD Power Dissipation, TC=25˚C, TJ = 175 ˚C TJ Junction Temperature TC , Tstg Case Temperature and Storage Temperature TL Solder Temperature, 1.6mm (0.063”) from case for 10s Note (1): Recommended turn off / turn on gate voltage VGS - 4V...0V / +15V Note.

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C3M0060065K

CREE
C3M0060065K
Part Number C3M0060065K
Manufacturer CREE
Title Silicon Carbide Power MOSFET
Description VDS C3M0060065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) N-Channel Enhancement Mode Features Package .
Features Package 650 V 37 A 60 mΩ
• 3rd Generation SiC MOSFET technology TAB Drain
• High blocking voltage with low on-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant Benefits
• Higher system efficiency
• R.

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C3M0060065D

Wolfspeed
C3M0060065D
Part Number C3M0060065D
Manufacturer Wolfspeed
Title Silicon Carbide Power MOSFET
Description C3M0060065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • Hig.
Features
• 3rd Generation SiC MOSFET technology
• High blocking voltage with low on-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant Applications
• EV charging
• Server power supplies
• Solar PV inverters
• UPS
• DC/.

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C3M0060065D

CREE
C3M0060065D
Part Number C3M0060065D
Manufacturer CREE
Title Silicon Carbide Power MOSFET
Description VDS 650 V C3M0060065D ID @ 25˚C 29 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 60 mΩ N-Channel Enhancement Mode .
Features Package
• 3rd Generation SiC MOSFET technology
• High blocking voltage with low on-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant Benefits
• Higher system efficiency
• Reduced cooling requirements
• In.

Document C3M0060065D datasheet pdf



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