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BUW11F NPN Transistor Datasheet


BUW11F

INCHANGE
BUW11F

Part Number BUW11F
Manufacturer INCHANGE
Description ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ...
Features ONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 3A; IB= 0.6A VCE=RatedVC...

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BUW11F

NXP
BUW11F
Part Number BUW11F
Manufacturer NXP
Title Silicon diffused power transistors
Description High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators .
Features d 4 tp < 20 ms; see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 8 and 9 3 2.5 5 10 32 0.8 A A A A W µs open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 14 2 Philips Semiconductors Product specification Silicon diffus.

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BUW11F

SavantIC
BUW11F
Part Number BUW11F
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-3PFa package www.datasheet4u.com ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control syste.
Features wise specified PARAMETER BUW11F IC=0.1A ; IB=0; L=25mH BUW11AF BUW11F BUW11AF BUW11F BUW11AF IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUW11F BUW11AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=2.

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