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BSM50GD120DN2 IGBT Datasheet


BSM50GD120DN2

Siemens Semiconductor Group
BSM50GD120DN2
Part Number BSM50GD120DN2
Manufacturer Siemens Semiconductor Group
Title IGBT MODULE
Description BSM 50 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base ...
Features Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.8 4 6.5 3 3.7 V VGE = VCE, IC = 2 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 50 A, Tj = 25 °C ...

Document Datasheet BSM50GD120DN2 datasheet pdf (126.61KB)
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BSM50GD120DN2G

eupec
BSM50GD120DN2G
Part Number BSM50GD120DN2G
Manufacturer eupec
Title IGBT
Description BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base .
Features cteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 2 mA 4.5 5.5 6.5 Collector-emitter saturation voltage VCE(sat) VGE = 15 V, IC = 50 A, Tj = 25 °C - 2.5 3 VGE = 15 V, .

Document BSM50GD120DN2G datasheet pdf


BSM50GD120DN2G

Siemens Semiconductor Group
BSM50GD120DN2G
Part Number BSM50GD120DN2G
Manufacturer Siemens Semiconductor Group
Title IGBT
Description BSM 50 GD 120 DN2G IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insu.
Features 2G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.8 4 6.5 3 3.7 V VGE = VCE, IC = 2 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 50 .

Document BSM50GD120DN2G datasheet pdf


BSM50GD120DN2E3226

Siemens Semiconductor Group
BSM50GD120DN2E3226
Part Number BSM50GD120DN2E3226
Manufacturer Siemens Semiconductor Group
Title IGBT
Description BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal ba.
Features Tj Tstg RthJC RthJCD Vis 1 BSM 50 GD120DN2E3226 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.8 4 6.5 3 3.7 V VGE = VCE, IC = 2 mA Collector-emitter satura.

Document BSM50GD120DN2E3226 datasheet pdf



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