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BC847CDW GENERAL PURPOSE TRANSISTOR Datasheet


BC847CDW

AiT Semiconductor
BC847CDW
Part Number BC847CDW
Manufacturer AiT Semiconductor
Title 트랜지스터 - 양극(BJT) - 어레이 2 NPN(이중) 45V 100mA 100MHz 380mW 표면 실장 SC-88/SC70-6/SOT-363
Description MECHANICAL DATA The BC846_BC847_BC848 are Dual NPN general purpose transistors, available in SC-88 package. ⚫ Low Current: 100mA (max) ⚫ Low Vol...
Features t Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current-Continuous IC 100 100 100 mAdc Stresses above may cause permanent damage to the device. These are stress ratings only and functional o...

Document Datasheet BC847CDW datasheet pdf (909.35KB)
Distributor Distributor
DigiKey
All other distributors
Stock 68 In Stock
Price
1000 units: 69.845 KRW
500 units: 100.512 KRW
100 units: 120.45 KRW
10 units: 246.7 KRW
1 units: 361 KRW
BuyNow BuyNow Buy Now (Manufacturer a onsemi SBC847CDW1T1G)



BC847CDXV6T5G

ON Semiconductor
BC847CDXV6T5G
Part Number BC847CDXV6T5G
Manufacturer ON Semiconductor
Title Dual General Purpose Transistors
Description BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general.
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
• These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol BC847 BC848 Unit Collector − Emitter Voltage VCEO 45 30 V Collector − Base Voltage VCBO 50.

Document BC847CDXV6T5G datasheet pdf


BC847CDXV6T5

ON Semiconductor
BC847CDXV6T5
Part Number BC847CDXV6T5
Manufacturer ON Semiconductor
Title Dual General Purpose Transistors
Description BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpos.
Features .9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) - 55 to +150 Unit mW mW/°C °C/W 1G D MARKING DIAGRAMS 1L D 1G = BC847CDXV6T1, BC847CDXV6T5 1L = BC848CDXV6T1, BC848CDXV6T5 D = Date Code Symbol PD Unit mW mW/°C °C/W °C ORDERING INFORMATION Device BC847CDXV6T1 BC847CDXV6T5 Pac.

Document BC847CDXV6T5 datasheet pdf


BC847CDXV6T1G

ON Semiconductor
BC847CDXV6T1G
Part Number BC847CDXV6T1G
Manufacturer ON Semiconductor
Title Dual General Purpose Transistors
Description BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general.
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
• These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol BC847 BC848 Unit Collector − Emitter Voltage VCEO 45 30 V Collector − Base Voltage VCBO 50.

Document BC847CDXV6T1G datasheet pdf


BC847CDXV6T1

ON Semiconductor
BC847CDXV6T1
Part Number BC847CDXV6T1
Manufacturer ON Semiconductor
Title Dual General Purpose Transistors
Description BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpos.
Features .9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) - 55 to +150 Unit mW mW/°C °C/W 1G D MARKING DIAGRAMS 1L D 1G = BC847CDXV6T1, BC847CDXV6T5 1L = BC848CDXV6T1, BC848CDXV6T5 D = Date Code Symbol PD Unit mW mW/°C °C/W °C ORDERING INFORMATION Device BC847CDXV6T1 BC847CDXV6T5 Pac.

Document BC847CDXV6T1 datasheet pdf


BC847CDW1T1

ETL
BC847CDW1T1
Part Number BC847CDW1T1
Manufacturer ETL
Title Dual General Purpose Transistors
Description Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–.
Features .

Document BC847CDW1T1 datasheet pdf



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