Description | SMD Type Power transistor 2SB1184 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -... |
Features | Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dis... |
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![]() Rohm |
2SB1182 |
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![]() Rohm |
2SB1185 |
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![]() SavantIC |
2SB1186 |
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![]() Rohm |
2SB1187 |
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![]() Ferranti |
Low Voltage X-Ray Tube |
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![]() Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
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![]() CTC |
SCHOTTKY BARRIER RECTIFIERS |
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![]() Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
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![]() Diodes |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
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![]() Littelfuse |
SIDACtor Protection Thyristors |
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Desde 2024. D4U Semiconductor.
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