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AON3810 20V Dual N-Channel MOSFET Datasheet


AON3810

Alpha & Omega Semiconductors
AON3810

Part Number AON3810
Manufacturer Alpha & Omega Semiconductors
Description The AON3810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while re...
Features ...

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AON3818

Alpha & Omega Semiconductors
AON3818
Part Number AON3818
Manufacturer Alpha & Omega Semiconductors
Title Dual N-Channel MOSFET
Description • Trench Power αMOS™ LV technology • Low RDS(ON) • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Applications • Battery prote.
Features ximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 35 60 15 Form Tape & Reel Minimum Order Quantity 3000 Maximum 24 ±12 8 6 32 2.7 1.7 -55 to 150 Units V V A W °C Max Units 45 °C/W 75 °C/W 20 °C/W Rev.2.

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AON3816

Alpha & Omega Semiconductors
AON3816
Part Number AON3816
Manufacturer Alpha & Omega Semiconductors
Title 20V Dual N-Channel MOSFET
Description Product Summary The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as lo.
Features teristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 40 75 30 Max 50 95 40 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 4: July 2010 www.aosmd.com Page 1 of 5 AON3816 Electrical .

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AON3814

Alpha & Omega Semiconductors
AON3814
Part Number AON3814
Manufacturer Alpha & Omega Semiconductors
Title 20V Dual N-Channel MOSFET
Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as lo.
Features to 150 D1 G2 S1 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 40 75 30 Max 50 95 40 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 6.0:July 2019 www.aosmd.com .

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AON3812

Alpha & Omega Semiconductors
AON3812
Part Number AON3812
Manufacturer Alpha & Omega Semiconductors
Title Field Effect Transistor
Description www.DataSheet4U.com provide Features VDS (V) = 30V ID = 6A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS.
Features VDS (V) = 30V ID = 6A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) The AON3812 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD pro.

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