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AM50N03 MOSFET Datasheet


AM50N03

AiT Semiconductor
AM50N03

Part Number AM50N03
Manufacturer AiT Semiconductor
Description FEATURE The AM50N03 is available in PDFN8(3.3x3.3) package. BVDSS RDSON ID 30V 7mΩ 50A APPLICATION  Super Low Gate Charge  Excellent C...
Features The AM50N03 is available in PDFN8(3.3x3.3) package. BVDSS RDSON ID 30V 7mΩ 50A APPLICATION
 Super Low Gate Charge
 Excellent CdV/dt Effect Decline
 Advanced High Cell Density Trench Technology PIN DESCRIPTION
 High frequency switching mode power supply ORDERING INFORMATION Package Ty...

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AM50N08-14D

Analog Power
AM50N08-14D
Part Number AM50N08-14D
Manufacturer Analog Power
Title MOSFET
Description Analog Power AM50N08-14D N-Channel 80-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching spee.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 10V 13 @ VGS = 4.5V VDS (V) 80 ID(A) 55 51 ABSOLUTE MAXIMUM RATING.

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AM50N06-20D

Analog Power
AM50N06-20D
Part Number AM50N06-20D
Manufacturer Analog Power
Title N-Channel MOSFET
Description Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) a.
Features C=25oC PD TJ, Tstg 60 ±20 41 100 50 50 -55 to 175 V A A W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junctio.

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AM50N06-15D

Analog Power
AM50N06-15D
Part Number AM50N06-15D
Manufacturer Analog Power
Title N-Channel MOSFET
Description Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal powe.
Features 40 Continuous Source Current (Diode Conduction)a IS 30 A Power Dissipationa Operating Junction and Storage Temperature Range TC=25oC PD 50 TJ, Tstg -55 to 175 W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3..

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AM50N04

AiT Semiconductor
AM50N04
Part Number AM50N04
Manufacturer AiT Semiconductor
Title 50A N-CHANNEL MOSFET
Description FEATURE The AM50N04 is available in TO-252 package. BVDSS RDSON ID 40V 11mΩ 50A  Green Device Available  Super Low Gate Charge  Excell.
Features The AM50N04 is available in TO-252 package. BVDSS RDSON ID 40V 11mΩ 50A
 Green Device Available
 Super Low Gate Charge
 Excellent CdV/dt Effect Decline
 Advanced High Cell Density Trench Technology APPLICATION
 High frequency switching mode power supply PIN DESCRIPTION ORDERING INFOR.

Document AM50N04 datasheet pdf


AM50N03-12I

Analog Power
AM50N03-12I
Part Number AM50N03-12I
Manufacturer Analog Power
Title N-Channel MOSFET
Description Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal powe.
Features 0 Continuous Source Current (Diode Conduction)a IS 30 A Power Dissipationa Operating Junction and Storage Temperature Range TC=25oC PD 50 TJ, Tstg -55 to 175 W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0.

Document AM50N03-12I datasheet pdf



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