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A2SHB N-Channel MOSFET Datasheet


A2SHB

HAOHAI
A2SHB

Part Number A2SHB
Manufacturer HAOHAI
Description 3.7A, 20V N  N  N-Channel Enhancement Mode Field Effect Transistor SMD   Features  ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V  ■High dense cell desig...
Features  
■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V  
■High dense cell design for extremely low RDS(ON)  
■Rugged and reliable  
■Lead free product is acquired  
■SOT-23 Package  
■Marking Code: A2SHB   Case Material: Molded Plastic.   UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302ALB(SO...

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A2SHB

Low Power Semi
A2SHB
Part Number A2SHB
Manufacturer Low Power Semi
Title N-Channel MOSFET
Description The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technolo.
Features
■ 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V
■ 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V
■ Super high density cell design for extremely low RDS(ON)
■ SOT23 Package Applications  Portable Media Players  Cellular and Smart mobile phone  LCD  DSC Sensor  Wireless Card  Marking Information Device Markin.

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A2SHB

SLS SEMICONDUCTOR
A2SHB
Part Number A2SHB
Manufacturer SLS SEMICONDUCTOR
Title N-Channel MOSFET
Description SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plastic-Encapsulate MOSFETS SLS2302(N-Channel Enhancement mode Field Effect Transistor) /MA.
Features 1、 ; 2、 ; /Applications: DC-DC 。 /Absolute maximum ratings(Ta=25℃) /Parameter -/Drain-Source Voltage -/Gate-Source Voltage ()/Continuous Drain Current /Power Dissipation / Thermal Resistance Junction to Ambient /Junction Temperature /Storage Temperature / Symbol VDS VGS ID PD RθJA Tj Tstg /Va.

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A2SHB

YUSHIN
A2SHB
Part Number A2SHB
Manufacturer YUSHIN
Title SOT-23 FET
Description SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS Characteristic Symbol Drai.
Features .

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