Description | The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Low Ciss: Ciss = 3200 pF TYP. • Built-in gate protection diod... |
Features |
• Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Low Ciss: Ciss = 3200 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3435 TO-220AB 2SK3435-S TO-262 2SK3435-ZJ 2SK3435-Z TO-263 TO-220SMD Note Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RAT... |
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Desde 2024. D4U Semiconductor.
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