logo

2N60-C N-CHANNEL MOSFET Datasheet


2N60-C

UTC
2N60-C
Part Number 2N60-C
Manufacturer UTC
Title
Description The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on...
Features * RDS(ON) < 4.6 Ω @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A46.G 2N60-C  ORDERING INFORMATION Ordering Numb...

Document Datasheet 2N60-C datasheet pdf (268.67KB)
Distributor Distributor
element14 Asia-Pacific
Stock 1084 In stock
Price
500 units: 2650 KRW
100 units: 3112 KRW
10 units: 3799 KRW
1 units: 4227 KRW
BuyNow BuyNow BuyNow (Manufacturer a onsemi FQP12N60C)



2N60-TC

UTC
2N60-TC
Part Number 2N60-TC
Manufacturer UTC
Title N-CHANNEL MOSFET
Description The UTC 2N60-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low o.
Features * RDS(ON) ≤ 4.2 Ω @ VGS=10V, ID=1.0A * High Switching Speed 1 SOT-223 1 TO-220F 11 TO-220F1 TO-220F2 1 TO-251 1 TO-252  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N60L-AA3-R 2N60G-AA3-R 2N60L-TF1-T 2N60G-TF1-T 2N60L-TF2-T .

Document 2N60-TC datasheet pdf




2N60-F

UTC
2N60-F
Part Number 2N60-F
Manufacturer UTC
Title N-CHANNEL MOSFET
Description The UTC 2N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on.
Features * RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain 1 TO-251 1 TO-252 1.Gate 3.Source  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N60L-TM3-T 2N60G-TM3-T 2N60L-TN3-.

Document 2N60-F datasheet pdf




2N60-E

Unisonic Technologies
2N60-E
Part Number 2N60-E
Manufacturer Unisonic Technologies
Title N-CHANNEL POWER MOSFET
Description The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on.
Features * RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-974.D 2N60-E Power MOSFET  ORDERING INFORMATION .

Document 2N60-E datasheet pdf




2N60-CBS

UTC
2N60-CBS
Part Number 2N60-CBS
Manufacturer UTC
Title N-CHANNEL POWER MOSFET
Description The UTC 2N60-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low .
Features * RDS(ON) ≤ 8.5Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 9 QW-R209-111.E 2N60-CBS Power MOSFET  ORDERING INFORMATION .

Document 2N60-CBS datasheet pdf





INDEX :0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ

logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy