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1SS307E Diode Datasheet


1SS307E

Toshiba
1SS307E
Part Number 1SS307E
Manufacturer Toshiba (https://www.toshiba.com/)
Title DIODE GEN PURP 80V 100MA SC79
Description Switching Diodes Silicon Epitaxial Planar 1SS307E 1. Applications • General-Purpose Rectifiers 2. Features (1) Very low reverse current. : IR = 10...
Features (1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production ...

Document Datasheet 1SS307E datasheet pdf (136.21KB)
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100 units: 0.0508 USD
10 units: 0.094 USD
1 units: 0.13 USD
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1SS307

Toshiba Semiconductor
1SS307
Part Number 1SS307
Manufacturer Toshiba Semiconductor
Title Diode
Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications  Low forward voltage  Low reverse current .
Features the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concep.

Document 1SS307 datasheet pdf



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