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1N60 Schottky Barrier Rectifier Datasheet


1N60

MCC
1N60
Part Number 1N60
Manufacturer MCC
Title Schottky Diodes & Rectifiers 40V - 50A Schottky Rectifier
Description MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High Reliabil...
Features
• High Reliability
• Low Reverse Current and Low Forward Voltage 1N60 1N60P Schottky Barrier Rectifier Maximum Ratings
• Storage Temperature: -65℃ to +125℃ Electrical Characteristics @ 25°C Unless Otherwise Specified Parameter Symbol Type Value Test Condition Repetitive 1N60 40V Peak Reverse ...

Document Datasheet 1N60 datasheet pdf (354.31KB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 2 In Stock
Price
1 units: 24.12 USD
10 units: 20.28 USD
25 units: 18.93 USD
100 units: 17.06 USD
BuyNow BuyNow Buy Now (Manufacturer a GeneSic Semiconductor Inc 1N6098)



1N60

KD
1N60
Part Number 1N60
Manufacturer KD
Title SMALL SIGNAL SCHOTTKY DIODE
Description 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon jun.
Features
● Metal-on-silicon junction, majority carrier conduction
● High current capability, Low forward voltage drop
● Extremely low reverse current Ir
● Ultra speed switching characteristics
● Small temperature coefficient of forward characteristics
● Satisfactory Wave detection efficiency
● For use in REC.

Document 1N60 datasheet pdf


1N60

UTC
1N60
Part Number 1N60
Manufacturer UTC
Title N-CHANNEL MOSFET
Description The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state r.
Features * RDS(ON) =9.3Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 TO-220F *Pb-free plating product number: 1N60L SYMBOL www.DataShee.

Document 1N60 datasheet pdf


1N60

TAITRON
1N60
Part Number 1N60
Manufacturer TAITRON
Title Germanium Glass Diode
Description Maximum Repetitive Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Current IFSM Peak For.
Features
• Germanium Glass Diode
• RoHS Compliance Germanium Glass Diode 1N60/1N60P DO-7 Mechanical Data Case: Terminals: Polarity: Weight: DO-7, molded glass Plated axial lead, solderable per MIL-STD-202E, Method 208 Color band denotes cathode end 0.2 gram Maximum Ratings and Electrical Characteristics.

Document 1N60 datasheet pdf


1N60

DEC
1N60
Part Number 1N60
Manufacturer DEC
Title GERMANIUM DIODES
Description 1N60, 1N60P Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop · Extremely low rev.
Features
· Metal silicon junction, majority carrier conduction
· High current capability, Low forward voltage drop
· Extremely low reverse current lR
· Ultra speed switching characteristics
· Small temperature coefficient of forward characteristics
· Satisfactory Wave detection efficiency
· For use in RECORD.

Document 1N60 datasheet pdf



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